磁过滤真空阴极弧等离子体制备四面体非晶碳膜

【作者】 张成武；

【导师】 李国卿；

【作者基本信息】 大连理工大学 ， 等离子体物理， 2004， 硕士

【摘要】 磁过滤阴极弧等离子体沉积系统能过滤阴极弧放电时产生的大颗粒，制备金属和合金薄膜材料，而且能制备性能优异的无氢类金刚石膜，从而越来越受到重视。 本文首先介绍了阴极弧的发展、原理及基本特征，然后介绍了磁过滤阴极弧的特点以及应用。简单阐述了类金刚石膜的发展、性能、应用及制备方法。 本文介绍了脉冲磁过滤阴极弧沉积系统和直流磁过滤阴极弧沉积系统的组成，测试了不同条件下，对放电稳定性的影响。 对两种系统沉积的碳膜采用拉曼光谱、原子力显微镜等进行了分析研究。分析结果表明，脉冲磁过滤阴极弧系统生长薄膜的偏压范围与直流磁过滤阴极弧沉积系统的生长范围有很大差别。利用反射高能电子衍射系统分析薄膜结构，表明制备的是非晶膜。利用拉曼光谱分析了碳膜的结构变化，利用原子力显微和电子扫描显微镜观察了薄膜的表面形貌，同时测试了薄膜的摩擦学性能。 偏压是影响薄膜性能的主要因素，在脉冲磁过滤阴极弧系中，沉积薄膜的最佳偏压为100V，而在直流磁过滤阴极弧系统中，制备的薄膜性能在偏压75V时最好。更多还原

【Abstract】 Filtered Cathode Vacuum Arc Plasma Deposition System can filter the microdroplets associated with conventional arc evaporation. It is a new deposition technology for a range of metals and compounds films. Ad it seems as one of the best methods to deposition Tetrahedral Amorphous Carbon (ta-C) which has widespread applications for its unique properties.In this paper, the development, e principle and characters of cathode arc are introduced. It is also introduced of the Diamond-like Carbon (DLC) films. The paper describes controlling measurements of the equipment and discussed the mechanisms of growing ta-C. Meanwhile, the properties and characters of ta-C films are observed by Raman spectroscopy, Reflection High Energy Electron Diffraction (RHEED), AFM and other methods.Bias is the important factor in depositing films and the optimal bias is 75V in pulse filtered cathode vacuum arc deposition system. But the bias is 700V in direct current filtered cathode vacuum arc deposition system.更多还原