真空阴极电弧及等离子体化学气相法沉积类金刚石碳膜的研究

【作者】 李敬财；

【导师】 胡社军； 何玉定；

【作者基本信息】 广东工业大学 ， 材料加工工程， 2004， 硕士

【摘要】 用真空阴极电弧(VAC)法和等离子体化学气相(PCVD)沉积法制备了类金刚石碳(DLC)膜，研究了通过不同制备方法和工艺参数制备DLC膜的表面形貌、结构和硬度。采用扫描电镜(SEM)、原子力显微镜(AFM)对薄膜的表面形貌进行了观察；采用X射线衍射(XRD)、激光拉曼光谱(Raman)对DLC膜结构进行了检测，用光电子能谱(XPS)对薄膜SP~3和SP~2含量进行了测试；采用了纳米硬度计检测了薄膜的硬度。研究结果表明： 采用VAC法入射粒子的能量和入射粒子的密度都存在一个阈值，当弧流为45A时，最佳负偏压值为-175V，此时DLC膜中最高SP~3键含量为49.86％；当弧流为65A时，最佳负偏压值为-100V，此时DLC膜中最高SP~3键含量为56.32％，纳米硬度值为17.1±7.72GPa；当负偏压为-100V时，最佳弧流为65A。仅当通过调节入射粒子能量和入射粒子的密度制备DLC膜时，二者存在一个最佳搭配值，在这个最佳搭配值条件下制备的DLC膜中SP~3含量为最高。 采用PCVD法制备DLC膜时，随着入射粒子的能量和入射粒子的密度的增加所制备DLC膜中SP~3含量也随之增加，在加速电压和离子束流同时达到了设备的额定值时，DLC膜中SP~3键含量最高为31.95％，采用Bulat—6离子源制备DLC膜时，由于该离子源的功率较低，不能进一步通过提高其加速电压和离子束流来提高DLC膜中SP~3含量。 通过对DLC膜的表面形貌的观察发现，采用VAC法制备的DLC膜表面有大的石墨颗粒的存在，严重的影响了薄膜的质量，使得薄膜表面硬度严重不均，有的相差达±7GPa，而采用PCVD法制备的DLC膜表面十分光滑，表面粗糙度Ra为0.34nm。 分析了石墨靶的起弧性质和起弧稳定性，选择了高纯、高强的石墨做为靶材；通过实验证实了Bulat—6离子源产生等离子体呈空间管状分布，大部分粒子流以直线的形式运动。广东工业大学工学硕士学位论文 研究了通入不同流量NZ对VAC法制备的DLC膜的影响。当通入NZ为24.Oml/min时，薄膜硬度降低(由原来的16.67 Gpa降低为9.57 Gpa)，而当通入NZ为58.2ml/min时，薄膜硬度又增加为18.6lGPa。 研究了通入不同流量CH4对TIC过渡层的影响，研究发现在本文试验的参数范围内，随着CH。的流量的增加，C和Ti的原子数比值增加，DLC膜与基体的结合力越好。更多还原

【Abstract】 Diamond-like Carbon(DLC) films were deposited by VAC and PCVD. Surface morphology, structure , performance of the DLC prepared with different methods and processes parameters. Surface of the films were observed by Scan Electron Microscope(SEM); The tructure of films were determined by X-ray Diffraction (XRD) and Later Raman Spectroscopy (Raman) ; contents of SP3 bonds and SP2 bonds were analyzed by X-ray photoelectron spectroscopy(XPS) ; Hardness of the films were measured by Depth-Sensing Indentation(DSI) .Results show , for DLC films deposited by VAC method, both energy and density of the incident particles have a threshold value. When arc current value is 45A, the optimum negative bias voltage is - 175V, SP3 bonds in the film is 49.86%; When arc current is 65A, the optimum negative bias voltage is - 100V, SP3 bonds in the film is 56.32%, the value of hardness of DLC is 17. 1卤7. 72Gpa ; When the negative bias voltage is - 100V,the optimum arc current is 65A. When DLC films prepared only through the adjustment of energy and density of the incident particles, there is an optimum value between them, contents of SP3 bonds in DLC films is the highest.For films deposited by PCVD method , Contents of SP3 bonds in films increase with the increase of energy and density of incident particles. When both accelerating voltage and ion current reach the specified value, the contents of SP3 prepared by PCVD method is the highest (31. 95%). Energy and density of incident particles doesn’ t come to an threshold value just like films prepared by VAC method. Because of the limited power of Bulat-6ion source, higher contents of SP3 bonds of DLC films prepared by the ion source cannot be attained further more.Through observation of DLC surface morphology, there are some large particles existing in DLC films prepared by VAC method, which affects the films qualities, such as hardness of the films has not a good uniformity, but no big particles exist in the films prepared by PCVD method, average roughness (Ra) value of the films is 0. 34nm.Arc ignition property and arc stability of graphite target was analyzed, a kind of high purity and high strength graphite target was selected; Distribution of the plasma produced by Bulat-6 ion source was tubular structure, most plasma move in linear manner.The effect of different flux of N2 on DLC films prepared by VAC method was investigated. Research results show that when the flux of N2 is 24. Oml/min, hardness of the films decrease to 9. 57GPa compared with the 16. 67GPa of hardness value of DLC film without N2 addition. However, When the flux increase to 58. 2ml/rain, the hardness value is 18. 61Gpa.The effect of different flux of CH4 on Ti 鈥擳iC interlayer was investigate. Research results show that, the adhesion property of DLC film is better with the increase of flux of CH4.更多还原