【作者】 牛新环；

【导师】 张维连；

【作者基本信息】 河北工业大学 ， 材料物理与化学， 2004， 硕士

【摘要】 本论文利用二次离子质谱（SIMS）、化学分析法（电感耦合等离子体（ICP）直读光谱仪）、扫描电镜能谱仪（SEM-EDX）三种方法对不同掺锗浓度的CZSiGe单晶中锗含量进行了测试，并对变速拉晶条件下锗的有效分凝系数进行了计算，得出锗的有效分凝系数（Ke）为0.62。根据测试结果画出了不同浓度锗的变化曲线。 利用FTIR法测得了不同锗浓度单晶中的氧碳含量，并对其谱图进行了研究，得出：在谱图的低波数端随锗浓度的提高(710cm^-1附近)出现了新的谱峰。650℃、850℃、1350℃分别退火后，测得谱图无明显变化，初步确定是由于新的键合Ge-C或Ge-C-Si的形成引起的。利用单晶X-ray衍射（SCXRD）对CZSiGe单晶的晶胞进行了测试，发现晶胞参数发生了明显的变化。利用原子力显微镜（AFM）对不同锗浓度的硅锗单晶的形貌进行了观察，得到了不同单晶的原子层形貌。论文中对硅锗单晶的光学禁带宽度进行了测试，得出了掺锗不同浓度下禁带宽度值。更多还原

【Abstract】 In this paper, germanium concentration in Ge-dopped silicon bulk single crystals was measured by the methods of indution couple plasma(ICP)direct reading spectrometer, SIMS, SEM-EDX, and the effective segregation coefficent of germanium under the situation of the changed speed was calculated, the result was 0. 62. According to the result, the curves of different Ge concentrations were got.The [Oi] and [Cs] of the different concentration of Ge-doped CZSi single crystals were measured by FTIR , and the spectroscopes were studied . The results indicated that when the concentration of Ge-doped was lower than lwt%,the FTIR spectroscopy was nearly the same as that of CZSi, but with the concentration of Ge-doped increasing, in the spectroscopes of the lower wave number of near 710 cm-1, there appeared a new peak . The spectroscopes of the samples annealed at 650# 850# 1350# had no clear different with those of the unannealed samples, which indicates that the new peak is no relation with strain. Those approved that the peaks related with Ge, and maybe caused by Ge-C or Si-Ge-C system. Using the single crystal X-ray diffraction(SCXRD) method, we got the lattice constant, and found it was more than that of silicon. The images of the single crystals with different Ge concentration were gotten by means of AFM method. The atomic layer patterns of different crystals were gotten.In this paper the band-gaps of the different concentration Ge-doped CZSi were measured, and the band-gap numbers were gotten.更多还原