【作者】 李超；

【导师】 冯克成；

【作者基本信息】 长春理工大学 ， 物理电子学， 2002， 硕士

【摘要】 本论文简要叙述了金刚石薄膜的研制进展和应用，介绍了用化学气相沉积法（Hot Filament Chemical Vapor Deposition）在不同的衬底上的金刚石薄膜的制备方法和形核，并对Si、Ni、Cu三种不同的衬底的金刚石膜研究了如何增大形核密度、提高形核质量。同时还研究了掺B金刚石膜和N形Si衬底之间的P-N结效应。为开展金刚石膜的半导体性质研究提供了一种方法。 主要研究内容： 1) 研究金刚石膜在不同衬底的形核问题是沉积高质量的金刚石膜的主要问题。通常把衬底分为三类，第一类：对于硅衬底的研究已经很成熟。第二类：对于镍衬底，可以采用在高温退火的过程中通入CH₄以补偿熔解进入衬底的碳的损失的方法改善形核。第三类衬底中以Cu为代表，如果我们在Cu衬底上蒸镀一层C₆₀膜作为过渡层，那么经过紫外光照射后，在合适的衬底温度下，可以改善金刚石的形核。 2) 研究掺B的金刚石膜和N型Si衬底之间的半导体P-N结效应研究。在N型引衬底上沉积一层连续的金刚石膜，通过二次离子注入的方法使B离子比较均匀的分布在金刚石膜中，通过测量I-V曲线，可以明显的看出P-N结效应的存在。更多还原

【Abstract】 The research and application of the diamond films were reviewed in this paper, and the nucleations on different substrates in HFCVD(I lot Filament Chemical Vapor Deposition)system were introduced. The improvement of the diamond nucleation on Si, Ni,Cu was investigated, in order to deposit diamond of high density .The P-N junction between B-implanted diamond films and N-type Si substrate was investigated. The work was shown as following:1 )The nucleation in different substrates is an important process in the deposition of diamond. By previous investigation , there are three categories of substrates. The growth of diamond on Si substrate has been extensively investigated. The density and quality of diamond nucleation on Ni substrate were great enhanced by additional CH, in the high-temperature annealing process. The Cu substrate belongs to the third category. If we deposited C60 as intermediate on the Cu substrate, using UV-light pretreatment, the nucleation of diamond was improved in fit temperature.2)The P-N heterjunction effects between B-implanted diamond films and N-type Si substrate was investigated. Polycrystalline diamond films were deposited on N-type Si substrates. In order to achieve a better distribution of the implanted element, boron ions were implanted by two steps. The I-V curves were studied , the P-N junction effect is very evident.更多还原