电子器件模拟软件中的MOSFET建模

【作者】 成世明；

【导师】 曾云；

【作者基本信息】 湖南大学 ， 微电子学与固体电子学， 2002， 硕士

【摘要】 本文首先介绍了电子器件计算机模拟的分类、MOSFET的建模发展动态、对器件模型的要求以及模型参数的提取方法。在第二章中建立了MOS晶体管在直流端电压条件下的工作模型；第三章推导了MOSFET的大信号模型，这两类模型不同于传统模拟软件例如PSPICE中的等效电路模型，而是从模型方程出发，采用数值模拟的方法，提高了模拟的精度。第四章和第五章分别建立了MOS晶体管低频、中频、高频的小信号模型，虽然借鉴了PSPICE模拟软件中用等效电路模型的方法，但是本文分别讨论了准静态和非准静态时器件的本征部分以及包含非本征部分工作于低频、中频和高频条件时的模型，可以根据这些模型编写相应的模拟软件，这样在做器件的模拟分析与器件设计的时候，就可以利用模拟软件逐步深入地分析器件在不同的条件下和器件的不同部分在工作时的各种小信号特性，有利于抓住器件工作的本质特性，设计出符合要求的各类通用和特殊器件。第六章简单论证了模型的正确性。更多还原

【Abstract】 In this paper, they are set forth at first that the kinds of computer-simulation of electronic devices , the development and the requirements of MOSFET’s model and the way of gain the models’ parameters,, The DC models have been bui It in chapter 2 and the models of big signals have been deduced in chapter 3, they are different from the equivalent circuit models in the traditional software PSPICE that they come from the numer i ca I -s i mu I at i on wh i ch is based on the essence equat i on, so the precision of simulation is enhanced?MOSFET’s small signal models of low frequency, intermediate frequency and high frequency have been built in chapter 4 and chapter 5, although the equivalent circuit models in PSPICE are used for reference to bui Id them, they have their own characteristics which are analyzed at a I I kinds of situations, so that the simulation software for MOSFET can be written according them and it i s a I so benef i c i a I for us to catch the gen i us character i st i cs of MOSFET and to design all kinds of applicable devices The correctness of the models is simply proved in chapter 6更多还原