真空微电子三极管的计算机模拟及性能测试

【作者】 史宁；

【导师】 皮德富；

【作者基本信息】 南京理工大学 ， 物理电子学， 2002， 硕士

【摘要】 本文在深入研究真空微电子器件场致发射理论的基础上，根据圆锥形、楔形阴极真空微电子三极管的不同特点，分别建立了物理和数学模型，在考虑空间电荷密度影响的前提下，以有限元法为基础采用迭代的方法计算出真空微电子三极管内的电势分布情况，绘制出了等势线、电子轨迹线，并得到了器件电学性能随几何参数的变化情况。在对模拟结果进行仔细分析后，结合半导体微细加工的特点在工艺条件允许的范围内建立了一套较完整的真空微电子三极管的优化设计方案，并从试验上制备出真空微电子三极管的测试样品。 完成了ZVD-1型真空微电子器件测试仪的研制，并对样品进行了测试，主要的测量参数为阳极电流、阴极电流、跨导、直流输出功率、输出电阻、电压增益等。通过对测试数据和模拟结果的比较和分析得出了一些重要的结论，这些结论将为真空微电子三极管进一步的研制及试验研究提供有力的依据。更多还原

【Abstract】 With the use of Finite method we have developed computer simulation software for vacuum microtriodes with wedge-shaped and cone-shaped cathode on the basis of stduying deeply the field emission theory of vacuum microelectronics.The software included field section, grid point numbering, and the calculation of electric currents, transconductance and cathode capacitance, moreover, it can simulate the properties of vacuum microeletronic with variant structures and sizes. The relationship was studied and simulated among electic properties and device structures, sizes and cathode materials etc. The optimized design of vacuum microtiode was proposed. Integrated vacuum microelectronic device was designed in terms of computer simulation result and semiconductor technique. We also developed ZVD-1 Testing Instrument for vacuum microelectronic device properties. After comparing the experimental data and simulation results of the electrical properties,we got the conclusion which will be benefit for the advanced study of vacuum microtriodes.更多还原