【作者】 史辰；

【导师】 沈光地；

【作者基本信息】 北京工业大学 ， 微电子学与固体电子学， 2001， 硕士

【摘要】 本论文主要就在SiGe HBT及其IC的研制过程中出现的问题进行讨论，并相应提出解决方案，最终设计出基于SiGe HBT的两级高频放大器。首先在第二章中，为进行定量研究，计算并得到了具有既定层结构的SiGe HBT的交流小信号等效模型；在建立模型的过程中，由HBT交流I—V方程出发，采用Y型和H型等效电路构架，计算并讨论了其与Si BJT模型的差异；用此模型较好解释了实际频率特性测量中出现的实验现象。然后在第三章中，对两级放大器的电路形式进行了讨论。第四章中，对初步设计的版图在p~+衬底上采用上述模型进行模拟，在有源器件纵向结构一定的前提下，得到影响电路频率性能的主要因素为横向图形尺寸和隔离方法；针对隔离方法进行优化并在Si基片实现了高阻衬底岛型隔离结构。第六章中，设计并优化正式版图，进一步讨论了衬底阻抗、基极串联电阻和压焊点尺寸的影响，使用不同条件模拟验证了高阻衬底岛型隔离方法的交流隔离效能。在第七章，设计了集成电路的工艺步骤。更多还原

【Abstract】 This thesis discussed several problems occurred in the SiGe I-IBTs and its ICs?research process, and gave relevant solutions, ultimately, we manufactured two-stage high frequency amplifier based on SiGe I-LBTs.At first, in Chapter 2, to research quantitatively, an AC equivalent small signal circuit model for established layer structures was developed. In this step, we began from HIBTs?I functions, employed the Y-type and H-type circuit forms, established models and then calculated and discussed the difference between AC models of SiGe I-IBTs and Si BJTs. Using this kind of model, in the end of Chapter 2, an experimental phenomenon was explained successfully. In Chapter 3, we discussed the circuit forms of two-stage amplifiers; and in Chapter 4, we simulated the incipient layout on pt-substrates with the model, finally reached the two main factors that influence the frequency characteristics of the transistors and circuits, dimension and isolation methods. Aiming at the isolation, we developed and improved High Impedance Substrate Is land-Type Isolation structure used in Si substrates. In Chapter 6, we redesigned and improved the layout and came up with the final one. In this step, moreover, the effect of substrate impedance, base series resistance and the dimension of pads on frequency characteristics was simulated and discussed. We used several possible conditions and validated the efficiency of the developed island-type isolation method.更多还原