【作者】 鲁鹏程；

【导师】 沈光地；

【作者基本信息】 北京工业大学 ， 半导体器件与微电子学， 2001， 硕士

【摘要】 半导体激光器是光电子产业中最重要的组成部分，是继大规模集成电路之后，信息高技术领域中最有发展前途的产品之一。普通大功率半导体激光器存在着比较严重的发热问题，特别是腔面灾变性损伤（COD）和大电流工作下的焦耳热，限制了半导体激光器功率的进一步提高。除此之外，大功率半导体激光器的光束质量差、发光效率较低，也大大影响了半导体激光器的工作特性，限制了半导体激光器的应用。 本论文首先分析了普通结构大功率半导体激光器目前存在的主要问题和限制。针对这些限制，沈教授提出了新型多有源区隧道再生量子阱激光器的新机理，使得突破了传统激光器内量子效率≤1的限制，可以在工作电流不变的情况下成倍地提高激光器的发光效率；并且多个独立的有源区通过隧道结耦合可以显著地增大腔面发光面积，提高了COD水平，改善远场对称性，提高模式稳定性。 对于大功率半导体激光器，波导结构形式的选择和结构参数的选取对器件的阈值电流水平、远场发散角、端面光流密度和总光输出功率等重要性能指标的优化具有重要意义。 一般情况下只考虑实折射率波导是因为折射率虚部与其实部相比对导波过程的影响可以忽略，而且便于简化问题，但这样往往忽视了问题的关键部分。在实际的波导结构中，如多量子阱激光器等，一般都包含多个增益区或损耗区，而增益和损耗与复折射率的虚部相联系，即波导是复折射率波导，因此对波导的模式分析应求其复传播常数。通过引入复折射率波导，使得我们分析问题时能够更加抓住问题的本质。因此本论文用一章内容阐述了复折射率波导的数值求解方法。随后针对单有源区（LD8），双有源区（LD11），三有源区（LD12、LD13、LD14、），四有源区（LD21）四种结构进行了模拟计算，并与实验测得的数据进行了对比分析，验证了算法的可行性，为下一步的研究做了一些有益的工作。最后结合面向对象的编程方法，设计出一个具有图形界面的软件。更多还原

【Abstract】 At the most important part of the optoelectronics industry, Semiconductor laser has become one of the most prospective products after the large-sclale integrated circuits. Semiconductor lasers have many advantages such as small volume, high power conversion efficiency, low dissipation of energy, direct current modulation, high rate of data transmission, high reliability, long lifetime and wide lasing spectrum etc. Because of these advantages semiconductor lasers have been heavily used in many fields. Particularly, the high power semiconductor lasers are the hotspot and focus of current research and industrialization.In this thesis, we firstly analyzed the main problems and limits of high power semiconductor lasers with ordinary structure, then introduced the theory of the novel high efficiency high power tunneling regenerated QW lasers proposed be professor Shen Guangdi. By comparing the new type lasers with the ordinary ones, we analyzed the characteristics such as: inner quantum efficiency, external differential quantum efficiency, power conversion efficiency and threshold current density, and summarize the main advantages of the novel high efficiency high power tunneling regenerated QW lasers. This new type lasers will have novel high quantum efficiency larger than 1, can achieve high output power at relative low current density and overcome the main hinder of ordinary high power semiconductor lasers: catastrophic optical damage (COD) by increase the size of facula. Basing on the analysis above, we also summarized two main problems that should be considered carefully in the design of this new type laser.By measuring and analyzing the characteristics of these new type lasers, we proved the physical theory of the novel high efficiency high power tunneling regenerated QW lasers and obtain the devices with the novel high quantum efficiency larger than 1.In real waveguide structure ,such as MQW laser, including several gain domain or lose domain, but gain and lose are connected with the real part of complex refract index .To analysis waveguide, we must get the complex refract index.In allusion to the structure of one active region ,two active region, three active region ,and four active region, we do some simulation and experiment. According to the results of, computation and experiment , we analysis optics characteristic of the tunneling regenerated QW lasers. To process more research, do some availability work.更多还原