【摘要】 随着高性能计算芯片功率密度的不断提升，传统散热技术面临严峻挑战。针对高功率密度芯片的散热需求，采用数值模拟方法研究了金刚石复合铜热沉在单相浸没冷却系统中的热特性。通过建立三维流固耦合传热模型，系统分析了金刚石片直径对散热性能的影响。研究结果表明：增大金刚石片直径可显著改善热沉底部温度均匀性，当直径从51 mm增至78 mm时，热源表面平均温度降低3.01 K,NU(温度不均匀性指标)稳定在1.79%;金刚石片的高导热特性显著提升了系统换热能力，散热效率随金刚石片直径增大而下降的现象反映了系统散热潜力的提升，努塞尔数随直径的增加提高了14.4%;热沉总热阻随金刚石片尺寸增大而降低，在直径78 mm时达到0.064K/W。为高功率密度电子器件的热管理提供了重要的设计依据。更多还原

【Abstract】 With the continuous increase in power density of high-performance computing chips, traditional heat dissipation technologies are facing severe challenges. Aiming at the heat dissipation requirements of high-power density chips, this paper investigates the thermal characteristics of diamond-composite copper heat sinks in single-phase immersion cooling systems using numerical simulation methods. By establishing a three-dimensional fluid-solid coupling heat transfer model, the influence of diamond wafer diameter on heat dissipation performance is systematically analyzed. The research results show that increasing the diameter of the diamond wafer significantly improves the temperature uniformity at the bottom of the heat sink. When the diameter increases from 51 mm to 78 mm, the average temperature of the heat source surface decreases by 3.01 K, and the temperature NU(Non-Uniformity) stabilizes at 1.79%. The high thermal conductivity of the diamond wafer significantly enhances the heat transfer capacity of the system. The decrease in heat sink efficiency with the increase in diamond wafer diameter reflects the improvement of the system’s heat dissipation potential, and the Nusselt number increases by 14.4% with the increase in diameter. The total thermal resistance of the heat sink decreases with the increase in diamond wafer size, reaching 0.064 K/W when the diameter is 78 mm. This study provides important design references for the thermal management of high-power density electronic devices.更多还原