Surface dielectric film-based transverse mode control for single-mode operation in 760 nm VCSELs

【摘要】 This study presents an approach that achieves single transverse mode lasing in 760 nm vertical cavity surface emitting lasers by depositing a high-index SiO₂/Ti₃ O₅ dielectric film on the p-type distributed Bragg reflector（P-DBR） to form a composite cavity with the n-type distributed Bragg reflector（N-DBR） and P-DBR. Simulations show enhanced optical path and field confinement, which reduces mode competition. At 20°C, the device achieves a 0.7 mA threshold, a 2 m W output at 5.5 mA, and a 20.09 MHz linewidth at 4 m A. At 80°C, the side-mode suppression ratio reaches 43.3 dB at 1.5 mA and remains>35 dB, indicating good thermal stability.更多还原

【Abstract】 This study presents an approach that achieves single transverse mode lasing in 760 nm vertical cavity surface emitting lasers by depositing a high-index SiO₂/Ti₃ O₅ dielectric film on the p-type distributed Bragg reflector（P-DBR） to form a composite cavity with the n-type distributed Bragg reflector（N-DBR） and P-DBR. Simulations show enhanced optical path and field confinement, which reduces mode competition. At 20°C, the device achieves a 0.7 mA threshold, a 2 m W output at 5.5 mA, and a 20.09 MHz linewidth at 4 m A. At 80°C, the side-mode suppression ratio reaches 43.3 dB at 1.5 mA and remains>35 dB, indicating good thermal stability.更多还原