【摘要】 金刚石作为一种超宽禁带半导体，是下一代功率电子器件和光电子器件最有潜力的材料之一。其产业化仍需解决几个关键技术问题：大尺寸单晶外延生长、高质量晶圆制备技术、高效可控的掺杂技术及先进终端结构。首先，介绍了拼接生长以及异质外延获得大尺寸单晶衬底的研究进展。进而，综述了大尺寸单晶金刚石位错、缺陷调控技术及其加工技术的研究进展。最后，从功率器件设计及制备角度总结了金刚石掺杂及终端结构设计面临的挑战并提出了潜在的解决方案。更多还原

【Abstract】 As an ultra-wide bandgap semiconductor, diamond is one of the most promising materials for next generation of power electronic devices and optoelectronic devices. However, the industrialization of diamond still needs to solve several key technical problems: large-sized single crystal epitaxial growth, high-quality wafer preparation technology, efficient and controllable doping technology, and advanced terminal structures. The research progress on mosaic growth and heteroepitaxy to obtain large-sized single crystal substrates is introduced. The research progress on dislocation and defect control techniques and cutting techniques for large-sized single crystal diamond is summarized. The challenges faced by diamond doping and terminal structure design are summarized from the perspective of power device design and fabrication, and the corresponding potential solutions are proposed.更多还原