节点文献

Relation of Ⅴ/Ⅲ ratio of AlN interlayer with the polarity of nitride

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具，请取消加速工具后下载。

【作者】 苏兆乐； 李阳锋； 胡小涛； 宋祎萌； 邓震； 马紫光； 杜春花； 王文新； 贾海强； 江洋； 陈弘；

【Author】 Zhaole Su;Yangfeng Li;Xiaotao Hu;Yimeng Song;Zhen Deng;Ziguang Ma;Chunhua Du;Wenxin Wang;Haiqiang Jia;Yang Jiang;Hong Chen;Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences;University of Chinese Academy of Sciences;School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science,University of Science and Technology Beijing;The Yangtze River Delta Physics Research Center;Songshan Lake Materials Laboratory;

【通讯作者】 江洋;陈弘;

【机构】 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences； University of Chinese Academy of Sciences； School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science,University of Science and Technology Beijing； The Yangtze River Delta Physics Research Center； Songshan Lake Materials Laboratory；

【摘要】 N-polar GaN film was obtained by using a high-temperature AlN buffer layer.It was found that the polarity could be inverted by a thin low-temperature AlN interlayer with the same Ⅴ/Ⅲ ratio as that of the high-temperature AlN layer.Continuing to increase the Ⅴ/Ⅲ ratio of the low-temperature AlN interlayer,the Ga-polarity of GaN film was inverted to N-polarity again but the crystal quality and surface roughness of GaN film greatly deteriorated.Finally,we analyzed the chemical environment of the AlN layer by x-ray photoelectron spectroscopy(XPS),which provides a new direction for the control of GaN polarity.

【Abstract】 N-polar GaN film was obtained by using a high-temperature AlN buffer layer.It was found that the polarity could be inverted by a thin low-temperature AlN interlayer with the same Ⅴ/Ⅲ ratio as that of the high-temperature AlN layer.Continuing to increase the Ⅴ/Ⅲ ratio of the low-temperature AlN interlayer,the Ga-polarity of GaN film was inverted to N-polarity again but the crystal quality and surface roughness of GaN film greatly deteriorated.Finally,we analyzed the chemical environment of the AlN layer by x-ray photoelectron spectroscopy(XPS),which provides a new direction for the control of GaN polarity.

【关键词】 semiconductors； Ⅲ-Ⅴ semiconductors； chemistry of MOCVD and other vapor deposition methods；
【Key words】 semiconductors； Ⅲ-Ⅴ semiconductors； chemistry of MOCVD and other vapor deposition methods；
【基金】 Project supported by the National Natural Science Foundation of China (Grant No. 62004218);the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB33000000)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2024年11期
  • 【分类号】O469
  • 【下载频次】2
打印本页
节点文献中：