【摘要】 基于全耗尽型(D-mode) 0.25μm硅基氮化镓(GaN-on-Si)工艺，设计了一款高频单片GaN DC-DC降压转换器芯片。该芯片集成了驱动电路和半桥功率级电路，驱动电路中电平放大功能通过有源上拉结构实现，在100～200 MHz频率范围内，单片GaN DC-DC降压转换器可直接被0.7 V的高速脉冲信号控制，无需片外模块，其峰值功率级效率达到92.2%,峰值总效率达到84.24%,峰值功率为7.7 W。相较于前期工作，芯片工作范围从100 MHz提升至200 MHz,在保证芯片效率性能的情况下，实现了对工作频率的大幅提升。更多还原

【Abstract】 This study presents the design and implementation of a high-frequency monolithic GaN DC-DC buck converter, fabricated using a 0.25 μm D-mode GaN-on-Si process. The chip integrates both the driver and the half-bridge power stage. The level-amplifying function in the driver is achieved through an active pull-up structure. Within the frequency range of 100-200 MHz, the proposed monolithic GaN DC-DC buck converter can be directly controlled by high-speed pulse signals with a voltage swing as low as 0.7 V, without requiring external off-chip modules. It achieves a peak power-stage efficiency, overall efficiency, and output power of 92.2%, 84.24% and 7.7 W respectively. Compared with previous research, this chip extends the operating frequency from 100 to 200 MHz while maintaining efficient performance, representing a significant enhancement in operating frequency.更多还原