【摘要】 随着第三代半导体GaN器件技术的不断发展，GaN高电子迁移率晶体管(HEMT)在电子系统中逐步得到了广泛应用。研制了一款小型化L波段300 W GaN脉冲功率模块。研发了满足高压脉冲工作条件的GaN HEMT芯片，采用负载牵引技术进行了器件大信号阻抗参数提取，并以此为基础设计了小型化匹配网络进行阻抗变换。基于高压驱动芯片和开关器件芯片设计了小型化高压脉冲调制电路。测试结果表明，在工作频率990～1 130 MHz、工作电压50 V、脉冲宽度100μs、占空比10%下，功率模块脉冲输出功率大于300 W,功率附加效率大于53%,功率增益大于38 dB。功率模块尺寸为30 mm×30 mm×8 mm。更多还原

【Abstract】 With the continuous development of the third generation of semiconductor GaN device technology, GaN high electron mobility transistors(HEMTs) are gradually widely applied in electronic systems.A miniaturized L-band 300 W GaN pulsed power module was developed.A GaN HEMT chip was developed to meet the working conditions of high-voltage pulses, and the large signal impedance parameters of the device were extracted by the load-pull technology, and based on this a miniaturized matching network was designed for impedance transformation.Based on the high-voltage driver chip and switching device chip, a miniaturized high-voltage pulsed modulation circuit was designed.The test results show that the pulsed output power of the power module is greater than 300 W,the power added efficiency is greater than 53%,and the power gain is greater than 38 dB,under the working frequency of 990-1 130 MHz, the working voltage of 50 V,the pulse width of 100 μs and the duty cycle of 10%.The power module size is 30 mm× 30 mm×8 mm.更多还原