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Optimal impurity distribution model and experimental verification of variation of lateral doping termination

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【作者】 任敏； 叶昶宇； 周建宇； 张新； 郑芳； 马荣耀； 李泽宏； 张波；

【Author】 Min Ren;Chang-Yu Ye;Jian-Yu Zhou;Xin Zhang;Fang Zheng;Rong-Yao Ma;Ze-Hong Li;Bo Zhang;State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China;Guangdong Institute of Electronic Information Engineering, University of Electronic Science and Technology of China;Wuxi China Resources Huajing Microelectronics Co.LTD;

【通讯作者】 任敏;

【机构】 State key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China； Guangdong Institute of Electronic Information Engineering University of Electronic Science and Technology of China； Wuxi China Resources Huajing Microelectronics Co.LTD；

【摘要】 Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OIDVLD) and its ion-injection mask design method are proposed and verified.The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD(T-VLD).Vertical double diffusion MOSFET(VDMOS) with OID-VLD achieved breakdown voltage(BV) of 1684 V and passed the 168 hours 100℃-110℃-120℃-125℃ high-temperature reverse bias(HTRB) test,while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120℃ HTRB test.

【Abstract】 Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OIDVLD) and its ion-injection mask design method are proposed and verified.The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD(T-VLD).Vertical double diffusion MOSFET(VDMOS) with OID-VLD achieved breakdown voltage(BV) of 1684 V and passed the 168 hours 100℃-110℃-120℃-125℃ high-temperature reverse bias(HTRB) test,while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120℃ HTRB test.

【关键词】 variation of lateral doping(VLD)； junction termination； breakdown voltage； reliability；
【Key words】 variation of lateral doping(VLD)； junction termination； breakdown voltage； reliability；
【基金】 Project supported by the Key Research and Development Program of Jiangsu Province,China (Grant No. BE2020010);the Natural Science Foundation of Guangdong Province,China (Grant No. 2023A1515012652)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2023年04期
  • 【分类号】TM50
  • 【下载频次】4
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