High-performance amorphous In–Ga–Zn–O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack

【摘要】 Amorphous In–Ga–Zn–O（a-IGZO） thin-film transistor（TFT） memories with novel p-SnO/n-SnO₂ heterojunction charge trapping stacks（CTSs） are investigated comparatively under a maximum fabrication temperature of 280℃. Compared to a single p-SnO or n-SnO₂ charge trapping layer（CTL）, the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention. Of the two CTSs, the tunneling layer/p-SnO/nSnO₂ /blocking layer architecture demonstrates much higher program efficiency, more robust data retention, and comparably superior erase characteristics. The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at -8 V/1 ms, and the ten-year memory window is extrapolated to be 4.41 V. This is attributed to shallow traps in p-SnO and deep traps in n-SnO₂ , and the formation of a built-in electric field in the heterojunction.更多还原

【Abstract】 Amorphous In–Ga–Zn–O（a-IGZO） thin-film transistor（TFT） memories with novel p-SnO/n-SnO₂ heterojunction charge trapping stacks（CTSs） are investigated comparatively under a maximum fabrication temperature of 280℃. Compared to a single p-SnO or n-SnO₂ charge trapping layer（CTL）, the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention. Of the two CTSs, the tunneling layer/p-SnO/nSnO₂ /blocking layer architecture demonstrates much higher program efficiency, more robust data retention, and comparably superior erase characteristics. The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at -8 V/1 ms, and the ten-year memory window is extrapolated to be 4.41 V. This is attributed to shallow traps in p-SnO and deep traps in n-SnO₂ , and the formation of a built-in electric field in the heterojunction.更多还原