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自由层磁性交换偏置效应调控隧穿磁电阻磁传感单元性能
Key performance of tunneling magnetoresistance sensing unit modulated by exchange bias of free layer
【摘要】 优化样品结构参数、磁场退火热处理、串并联桥式设计、施加电流热效应以及额外偏置磁场等是调控隧穿磁电阻(tunnel magnetoresistance, TMR)磁传感性能的常用方法.借助这些方法可以提高TMR磁传感的灵敏度、抗噪声指数、线性度和线性磁场范围等关键性能参数.其中,通过改变TMR磁传感单元的钉扎层、自由层以及势垒层材料和厚度等样品结构参数能够改变交换偏置场,进而提升TMR磁传感性能参数.本文基于微磁学仿真和实验测量发现,通过改变自由层CoFeB/Ru/NiFe/IrMn中的交换耦合作用,可以调制TMR自由层的交换偏置场大小和提升TMR磁传感单元的性能.当逐步增强IrMn钉扎效果时, TMR磁传感单元的线性磁场范围随之增大,但是磁场灵敏度降低;在±0.5倍自由层(主要是CoFeB层)磁矩变化范围内所有TMR磁传感单元的线性度最佳.
【Abstract】 Optimizing sample structural parameters, magnetic field annealing, series-parallel bridge design, current thermal effect, and additional bias magnetic field are common methods used for controlling the tunneling magnetoresistance(TMR) magnetic sensing performance. By employing these methods, key performance parameters of TMR sensors such as sensitivity, noise resistance index, linearity, and linear magnetic field range can be optimized and improved. Changing the sample structural parameters, such as the pinning layer, free layer, and barrier layer materials and thickness of the TMR magnetic sensing unit, can change the exchange bias field and thus enhance the TMR magnetic sensing performance parameters. In this study, through micromagnetic simulation and experimental measurements, it is discovered that by modifying the exchange coupling in the free layer CoFeB/Ru/NiFe/IrMn, the exchange bias field magnitude of the TMR free layer can be modulated, leading to improved performance of the TMR magnetic sensing unit. As the IrMn pinning effect is gradually enhanced, the linear magnetic field range of the TMR magnetic sensing unit increases, but the magnetic field sensitivity decreases. It is further found that the linearity of the TMR magnetic sensor is optimal within a range of ±0.5 times the magnetic moment variation of the free layer(primarily the CoFeB layer).Through our work, the effect of exchange bias field(caused by the pinning IrMn of the free layer) on the magnetic sensing performance is verified in the TMR magnetic sensing unit. Our work demonstrates more possibilities for designing and optimizing TMR magnetic sensors, enriching the dimensions of magnetic sensing performance modulation.
【Key words】 exchange bias effect; magnetic tunnel junctions; tunneling magnetoresistance linear sensing unit; magnetoresistive sensors;
- 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,2023年19期
- 【分类号】O482.5
- 【下载频次】55