【摘要】 为了获得6英寸（1英寸≈2.54 cm）低缺陷InP单晶，采用改进的高压液封直拉技术生长了低位错密度的直径6英寸、最大长度超过了120 mm的InP单晶。掺杂剂为Fe和S,晶体的导电类型分别是半绝缘型和n型。首先分析了6英寸InP单晶生长的难点，利用半封闭热屏方法减小晶体内部的温度差异来降低晶体内的位错密度，同时采用多加热器热场调节晶体生长界面的稳定性并降低孪晶形核概率。从工艺角度阐述了固液界面对生长过程中位错及孪晶的影响，并提出降低位错增殖的工艺措施。通过优化生长条件及合适的固液界面形貌，将直径6英寸的半绝缘InP单晶的位错密度降低到0.5×10⁴～1×10⁴ cm^-2。对掺S的n型InP单晶片，超过70%面积上位错密度可以低至0.5×10³～1×10³ cm^-2。更多还原

【Abstract】 In order to obtain 6-inch（1 inch≈2.54 cm） low defect InP single crystals, 6-inch diameter InP single crystals with low dislocation density and a maximum length of more than 120 mm were grown by the improved high pressure liquid encapsulated Czochralski technique.The dopants are Fe and S,and the conductive types of the crystals are semi-insulating and n-type respectively.Firstly, the difficulties in the growth of 6-inch InP single crystals were analyzed.The semi-closed thermal shield method was used to reduce the temperature difference inside the crystal to decrease the dislocation density inside the crystal.At the same time, multiple heaters thermal field was used to adjust the stability of the crystal growth interface and reduce the probability of twinning nucleation.The influence of solid-liquid interface on the dislocation and twin in the growth process was expounded from the view point of growth technology, and the process measures to reduce dislocation multiplication were proposed.The dislocation density of the semi-insulating InP single crystals with a diameter of 6-inch is reduced to 0.5×10⁴-1×10⁴ cm^-2 by optimizing growth conditions and the appropriate solid-liquid interface morphology.For S doped n-type InP single crystals, the dislocation density of more than 70% area of epistasis can be as low as 0.5×10³-1×10³ cm^-2.更多还原