【摘要】 采用常规的碱性清洗液清洗大偏角半导体级激光器用砷化镓晶片，外延后会出现几万颗缺陷点。清洗完成后的晶片用X射线光电子能谱(XPS)分析，发现其氧化层中氧化镓的相对含量较大，晶片表面氧化物含量相对较少。针对该问题提出了解决办法，即在普通碱性清洗液之后，通过添加酸性清洗液来增加氧化层的厚度，从而调整氧化镓的含量，最终达到减少外延后异常点的目的。更多还原

【Abstract】 In this paper, the problem that tens of thousands of defects will appear after epitaxy of GaAs wafers for semiconductor lasers with large off-angle cleaned by conventional alkaline cleaning solution is studied. Through X-ray photoelectron spectroscopy(XPS) analysis of the wafers after cleaning, it was found that the relative content of gallium oxide in the oxide layer was large, and the content of oxide on the wafer surface was relatively small. To solve this problem, we put forward a solution that the thickness of the oxide layer is increased by adding acid solution cleaning after the normal alkaline cleaning solution, so as to adjust the content of gallium oxide, and finally achieve the purpose of reducing the outliers after epitaxy.更多还原