【摘要】 采用无毒、环保的水溶液法,制备HfGdO_X薄膜（HGO）。通过XRD、UV、XPS、C-F和J-V等表征手段探索HGO薄膜最佳掺杂浓度和退火温度。以HGO薄膜为栅介质制备的铟镓锌氧薄膜晶体管（IGZO/HGO TFTs）饱和载流子迁移率(μ_sat)达16.8 cm²v^-1s^-1,开关电流比达1.5×10⁷。基于IGZO/HGO TFTs的电阻负载型反相器电压增益为9。结果表明,水溶液法制备的HGO高K薄膜在高分辨率平板显示器件和超大规模集成逻辑电路中具有潜在的应用前景。更多还原

【Abstract】 In this paper, HfGdOX films(HGO) were prepared by non-toxic and environmentally friendly aqueous solution method. By means of XRD, UV, XPS, C-F and J-V, the optimal doping concentration and annealing temperature of HGO films were explored. Indium-gallium-zinc-oxygen thin film transistors(IGZO/HGO TFTs) were prepared by using HGO as gate dielectric, and the saturation carrier mobility(μsat) was up to 16.8 cm2 v-1 s-1, and the on/off current ratio was up to 1.5×107. The voltage gain of resistor loaded inverter based on IGZO/HGO TFTs was up to 9. The results show that HGO high-k films prepared by aqueous solution method have potential application prospects in high-resolution flat panel display devices and VLSI logic circuits.更多还原