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Antimony Selenide Thin Film Solar Cells with an Electron Transport Layer of Alq3

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【作者】 师文建； 阚泽明； 程传辉； 李文慧； 宋航琪； 李萌； 于东麒； 杜秀云； 刘维峰； 金盛烨； 丛书林；

【Author】 Wen-Jian Shi;Ze-Ming Kan;Chuan-Hui Cheng;Wen-Hui Li;Hang-Qi Song;Meng Li;Dong-Qi Yu;Xiu-Yun Du;Wei-Feng Liu;Sheng-Ye Jin;Shu-Lin Cong;School of Physics and Electronic Technology, Liaoning Normal University;School of Physics, Dalian University of Technology;Mechanical and Electrical Engineering College, Hainan University;State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics,Chinese Academy of Sciences;

【通讯作者】 程传辉;于东麒;

【机构】 School of Physics and Electronic Technology, Liaoning Normal University； School of Physics, Dalian University of Technology； Mechanical and Electrical Engineering College, Hainan University； State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics,Chinese Academy of Sciences；

【摘要】 We fabricated Sb2 Se3 thin film solar cells using tris（8-hydroxy-quinolinato） aluminum（Alq3） as an electron transport layer by vacuum thermal evaporation.Another small organic molecule of N,N’-bis（naphthalen-1-yl）-N,N’-bis（phenyl）benzidine（NPB） was used as a hole transport layer.We took ITO/NPB/Sb2Se3/Alq3/Al as the device architecture.An open circuit voltage(Voc) of 0.37 V,a short circuit current density(Jsc) of 21.2 mA/cm2,and a power conversion efficiency（PCE） of 3.79% were obtained on an optimized device.A maximum external quantum efficiency of 73% was achieved at 600 nm.The Jsc,Voc,and PCE were dramatically enhanced after introducing an electron transport layer of Alq3.The results suggest that the interface state density at Sb2 Se3/Al interface is decreased by inserting an Alq3 layer,and the charge recombination loss in the device is suppressed.This work provides a new electron transport material for Sb2Se3 thin film solar cells.

【Abstract】 We fabricated Sb2 Se3 thin film solar cells using tris（8-hydroxy-quinolinato） aluminum（Alq3） as an electron transport layer by vacuum thermal evaporation.Another small organic molecule of N,N’-bis（naphthalen-1-yl）-N,N’-bis（phenyl）benzidine（NPB） was used as a hole transport layer.We took ITO/NPB/Sb2Se3/Alq3/Al as the device architecture.An open circuit voltage(Voc) of 0.37 V,a short circuit current density(Jsc) of 21.2 mA/cm2,and a power conversion efficiency（PCE） of 3.79% were obtained on an optimized device.A maximum external quantum efficiency of 73% was achieved at 600 nm.The Jsc,Voc,and PCE were dramatically enhanced after introducing an electron transport layer of Alq3.The results suggest that the interface state density at Sb2 Se3/Al interface is decreased by inserting an Alq3 layer,and the charge recombination loss in the device is suppressed.This work provides a new electron transport material for Sb2Se3 thin film solar cells.

【关键词】 Electron； evaporation； annealing； introducing； recombination； vacuum； Solar； preferred； inserting； suppressed；
【基金】 Supported by the High Level Talents Project of Hainan Basic and Applied Research Program(Natural Science)(Grant No.2019RC118);the Open Fund of the State Key Laboratory of Molecular Reaction Dynamics in DICP(Grant No.SKLMRDK202005)
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2020年10期
  • 【分类号】TM914.42
  • 【下载频次】19
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