【摘要】 二维半导体材料由于具有超薄的厚度同时表现出优异的物理性能,被寄望突破传统半导体发展瓶颈,成为新一代集成电路的重要组成部分.目前基于二维材料的场效应晶体管分立器件被广泛研发,但受限于接触问题,大部分二维半导体晶体管所表现出的输运性能仍不理想.本文通过引入一个额外的接触栅极,对二维半导体接触区进行独立控制:通过对接触区静电掺杂浓度的调控,有效降低了器件的接触电阻,实现了器件在整个工作状态的欧姆接触,获得了近乎理想的输运性能;同时,作者还通过对接触区域载流子掺杂类型的有效控制实现了器件的可重构功能,利用控制栅电压的调控实现器件在n型FET和p型FET之间的灵活切换,并基于这一特性进一步构建了高增益互补反相器电路.本研究有望为新一代集成电路设计提供重要的原型器件,推动集成电路产业迅速发展.更多还原

【Abstract】 The newly emerged two-dimensional（2D） semiconducting materials, owning to the atomic thick nature and excellent optical and electrical properties, are considered as potential candidates to solve the bottlenecks of traditional semiconductors. However, the realization of high performance 2D semiconductorbased field-effect transistors（FETs） has been a longstanding challenge in 2D electronics, which is mainly ascribing to the presence of significant Schottky barrier（SB） at metal-semiconductor interfaces. Here, an additional contact gate is induced in 2D ambipolar FET to realize near ideal reconfigurable FET（RFET）devices without restrictions of SB. Benefitting from the consistently high doping of contact region, the effective SB height can be maintained at ultra-small value during all operation conditions, resulting in the near ideal subthreshold swing（SS） values（132 mV/decade for MoTe₂ RFET and 67 mV/decade for WSe₂ RFET） and the relatively high mobility（28.6 cm²/（Vs） for MoTe₂ RFET and 89.8 cm²/（V s） for WSe2 RFET）. Moreover, the flexible control on the doping polarity of contact region enables the remodeling and switching of the achieved unipolar FETs between p-type mode and n-type mode. Based on such reconfigurable behaviors, high gain complementary MoTe₂ inverters are further realized. The findings in this work push forward the development of high-performance 2D semiconductor integrated devices and circuits.更多还原