【摘要】 采用溶胶凝胶-沉淀法,制备以ZnO_1-xS_x-SiO₂为基质掺杂Tb³⁺发光材料,并通过激发光谱、发射光谱以及红外光谱、X射线衍射等手段研究了材料的发光性质和结构,重点研究了SiO₂掺入对发光材料发光性能的影响。结果表明:SiO₂的掺入能显著地提高ZnO_1-xS_x-SiO₂∶Tb³⁺发光材料的发光性能,并确定其最佳激发波长为377nm,最佳退火温度为800℃。结构研究确定了ZnO_1-xS_x-SiO₂∶Tb³⁺发光材料中主要存在Si—O—Si键、Zn—S键和Si—O₄基团,属于晶态。最后依据结构对材料发光机理进行了推测。更多还原

【Abstract】 The ZnO_1-xS_x-SiO₂ doped by Tb³⁺ luminescent materials were prepared by sol-gel precipitation method.The luminescence properties and structure of the materials were studied by excitation spectroscopy,emission spectroscopy,IR and XRD.The focus was the effect of SiO₂ incorporation on the luminescence properties of the materials.The results shown that the incorporation of SiO₂ can significantly improve the luminescence properties of the materials,and determined the optimum excitation wavelength of the materials was 377 nm,the optimum annealing temperature 800℃.Structural studies determined that Si—O—Si bonds,Zn—S bonds and Si—O₄ groups were mainly present in the materials,which belonged to crystalline.Finally,the luminescence mechanism of the materials was presumed based on the structure.更多还原