【摘要】 绝缘栅双极型晶体管(IGBT)在桥式电路中的穿通现象会使得同一桥臂的两个IGBT同时导通,发生短路烧毁。利用Simulink软件对IGBT电路进行仿真分析,通过实验电路对IGBT实际工作进行测试及比较,探讨了母线电压、栅极电阻、栅-射极间并联电容对IGBT感应栅压的影响;并对桥式结构中IGBT各电参数的退化情况进行详细地分析,可得:母线电压对感应栅压的大小基本无影响;栅极电阻与感应栅压呈正相关;栅-射极间并联电容越大,感应栅压越小;集电极漏电流和通态电阻退化明显。并根据分析讨论结果,给出优化方案,对提高桥式结构中IGBT的可靠性有着重要意义。更多还原

【Abstract】 Insulated gate bipolar transistor(IGBT) full-bridge shoot-through characterization will cause two IGBTs of the same arm to conduct at the same time resulting in short circuit burning.The IGBT circuit is simulated and analyzed by Simulink and IGBT is tested and compared by experimental circuit.The influence of bus voltage,grid resistance and parallel capacitance between gate and emitter on IGBT induced gate-voltage is discussed.The degradation of IGBT electrical parameters in bridge structure is analyzed.It is concluded that the bus voltage has little effect on the magnitude of the induced gate-voltage.The gate-resistance is positively correlated with the induced gate-voltage.The larger the parallel capacitance between gate and emitter is,the smaller the induced gate-voltage is.The collector leak-age current and on-state resistor are obviously degraded.According to the analysis and discussion,the optimization scheme is given which is of great significance to improve the reliability of IGBT in bridge structure.更多还原