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基于深腐蚀技术的纳米银压力烧结接头微观组织研究(英文)
Investigation of Microstructure of Pressure-assisted Ag Sintering Layer by Deep-etching Method
【摘要】 采用纳米银薄膜作为研究对象,在250℃下施加5~10 MPa的烧结压力,获得低孔隙率(1.2%~1.4%)的高质量烧结接头。随着烧结压力由5 MPa增大至10 MPa,接头抗剪切强度显著提升。借助深腐蚀技术对烧结接头及块体银的微观组织结构进行对比分析。结果表明,烧结接头的深腐蚀形貌与块体银存在明显差异。烧结接头在深腐蚀条件下呈现大量微米尺度的多边形银晶粒,当烧结压力由5 MPa增大至10 MPa时,多边形晶粒的尺寸与晶粒间的连接面积发生明显变化。这一现象是影响纳米银压力烧结连接接头性能的主控因素。
【Abstract】 Nano silver(Ag) film was used as the bonding material. High quality bonding layers with low porosity(1.2% ~1.4%) were obtained when applying sintering pressure of 5~10 MPa at 250 °C. The microstructure of the sintered layers was investigated by deep-etching method in comparison with the bulk Ag. The results reveal that the deep-etched morphology of the sintered layer is quite different from that of the bulk Ag. Micron-scale polyhedral Ag grains are observed in the deep-etched morphology of the sintered layers. The grain size and the area of the interfaces between these polyhedral Ag grains change as the sintering pressure increases from 5 MPa to 10 MPa, which is considered as the dominate factor affecting the bonding properties of the sintered layers. As the sintering pressure increases from 5 MPa to 10 MPa, the shear strength of the pressure-assisted sintering specimens is improved.
【Key words】 bonding; reliability; sintering; microstructure; deep-etching;
- 【文献出处】 稀有金属材料与工程 ,Rare Metal Materials and Engineering , 编辑部邮箱 ,2020年01期
- 【分类号】TB383.2;TG178
- 【下载频次】91