【摘要】 宽带低噪声放大器是5G无线通信系统中的关键模块。针对6GHz以下5G通信应用频段,基于65nm CMOS工艺,设计了一种三级均匀分布式宽带低噪声放大器。在增益单元电路中,采用噪声抵消技术降低了噪声,同时实现了信号的单转双变换,并通过电流复用技术提升了增益。栅极人工传输线的终端采用了RL型负载,进一步改善了放大器的噪声性能。仿真结果表明,该分布式低噪声放大器的带宽为0.5～5.7GHz,带内增益达到24.2dB,噪声系数低于4.5dB,而最小噪声系数仅为2.7dB。更多还原

【Abstract】 The broadband low noise amplifiers was a critical module in 5 Gwireless communication systems.For the 5 G wireless communication systems working in the frequency band below 6 GHz,a three-stage uniform broadband distributed low noise amplifier(DLNA)was designed in a 65 nm CMOS technology.The noise cancelling technique was used in the gain cell circuits for the noise reduction and the conversion from single ended signal to differential signal.The current reuse technique was applied to enhance the gain.The resistive-inductive network load was used in the terminal of the gate artificial transmission line to further improve the noise performance.Simulation results showed that the proposed DLNA achieved a high gain of 24.2 dB in the frequency band from 0.5 to 5.7 GHz,and the noise figures was below 4.5 dB with a minimum value of 2.7 dB.更多还原