【摘要】 基于0.25μm GaAs pHEMT工艺,设计了一种2～20GHz的超宽带高效率功率放大器。该功率放大器采用非均匀分布式结构,可以为各级晶体管提供最佳负载阻抗。引入了漏极并联电容,以平衡输入与输出传输线的相速度,提高了输出功率和效率。在栅极引入了RC并联电路,能提高输入传输线的截止频率,保证电路稳定。仿真结果表明,在2～20GHz的频带范围内,该功率放大器的增益为(10.7±1.2)dB,输入回波损耗小于-10dB,饱和输出功率为28.8～29.7dBm,功率附加效率(PAE)为33%～47%。更多还原

【Abstract】 Based on a 0.25μm GaAs pHEMT technology process,a 2～20 GHz ultra-wideband power amplifier with high efficiency was designed.A non-uniform distributed structure was used to give optimum load impedances to each stages of transistors.Additional drain shunt capacitors were introduced to balance the phase velocities between input and output transmission lines and to improve the output power and efficiency.The introduction of RC paralleling circuits at the gate of FETs could increase the cutoff frequency of gate transmission lines and maintain the stability of the circuit.Simulated results showed that in the 2～20 GHz band range,the power amplifier achieved a small signal gain of(10.7±1.2)dB and a saturated output power of 28.8～29.7 dBm with a power added efficiency(PAE)of 33%～47%.更多还原