【摘要】 搭建了纳秒激光加热、连续激光探测的光热反射实验系统,通过测量芯片中多层微米厚度薄膜不同位置的反射信号,评估了不同薄膜结构对器件散热的影响.在多层薄膜热传导模型的基础上,结合Laplace逆变换的Stehfest数值解拟合得到了微米级厚度薄膜的热物性参数以及界面传热特性.拟合得到绝缘层热导率为0.75 W/（m·K）,与磁控溅射Al薄膜间的界面热阻约为10^-8 m²K/W.进而建立了电子器件封装镀膜的热分析有限元模型,比较了沉积类金刚石薄膜前后芯片热点温度的变化,结果表明:类金刚石薄膜可以进一步改善芯片的散热性能.更多还原

【Abstract】 An experimental system consists of the continuous laser detection and nanosecond laser heating is established. The heat dissipation in the multilayer films with thickness of tens of micrometers in a chip device is evaluated by measuring the reflection signals in the different positions. Based on the multilayer-film structure, the heat conduction model is presented, and the thermal physical properties of thin films and the interfacial thermal resistance are calculated by fitting the time-resolved transient surface temperature, which is performed by using the numerical Stehfest method to solve the Laplace inverse transformation. The obtained thermal conductivity of the insulating layer is about 0.75 W/（m·K） and the interfacial thermal resistance between the magnetron sputtering Al film and the insulating layer has the order of 10^-8 m²K/W. Based on this fact,the thermal analysis model in the finite element simulation is established and the hot spot temperature with and without the deposition of diamond-like carbon film is compared. The result shows that the heat dissipation in the electric device can be further enhanced by introducing the diamond-like carbon films.更多还原