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电弧离子镀低温沉积TiN薄膜的显微结构与残余应力(英文)
Microstructure and residual stress of TiN films deposited at low temperature by arc ion plating
【摘要】 采用电弧离子镀技术在316L不锈钢基体上低温沉积TiN薄膜,并利用EDS、SEM、XRD和纳米压痕仪研究基体偏压和温度对薄膜的显微结构、残余应力和力学性能的影响规律。结果表明,TiN薄膜表现出高度(111)择优取向的面心立方结构。随着基体偏压和温度的增加,衍射峰强度急剧增加,同时峰变窄,晶粒尺寸从6.2 nm增大到13.8 nm。当基体温度从10℃增加到300℃时,薄膜的残余压应力从10.2 GPa急剧下降到7.7 GPa,从而导致薄膜的硬度从33.1 GPa下降到30.6 GPa,而薄膜的结合力则从9.6 N增加到21 N。
【Abstract】 The TiN films were deposited on 316 L stainless steel substrates at low temperature by arc ion plating. The influences of substrate bias voltage and temperature on microstructure, residual stress and mechanical properties of the films were investigated by EDS, SEM, XRD and nanoindenter tester, respectively. The results showed that the TiN films were highly oriented in(111) orientation with a face-centered cubic structure. With the increase of substrate bias voltage and temperature, the diffraction peak intensity increased sharply with simultaneous peak narrowing, and the small grain sizes increased from 6.2 to 13.8 nm. As the substrate temperature increased from 10 to 300℃, the residual compressive stress decreased sharply from 10.2 to 7.7 GPa, which caused the hardness to decrease from 33.1 to 30.6 GPa, while the adhesion strength increased sharply from 9.6 to 21 N.
【Key words】 TiN film; arc ion plating; residual stress; low temperature; bias voltage;
- 【文献出处】 Transactions of Nonferrous Metals Society of China ,中国有色金属学报(英文版) , 编辑部邮箱 ,2018年07期
- 【分类号】TG174.4
- 【被引频次】7
- 【下载频次】141