节点文献

High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 吴仕剑王芳张志超李毅韩叶梅杨正春赵金石张楷亮

【Author】 Shi-Jian Wu;Fang Wang;Zhi-Chao Zhang;Yi Li;Ye-Mei Han;Zheng-Chun Yang;Jin-Shi Zhao;Kai-Liang Zhang;School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices,Tianjin University of Technology;

【通讯作者】 王芳;张楷亮;

【机构】 School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices,Tianjin University of Technology

【摘要】 The impacts of HfO_x inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory(TRRAM) device were investigated in this paper. The bipolar resistive switching behavior of a single ZnO film and bilayer HfO_x/ZnO films as active layers for TRRAM devices was demonstrated. It was revealed that the bilayer TRRAM device with a 10-nm HfO_x inserted layer had a more stable resistive switching behavior than other devices including the single layer device, as well as being forming free, and the transmittance was more than 80% in the visible region. For the HfO_x/ZnO devices, the current conduction behavior was dominated by the space-charge-limited current mechanism in the low resistive state(LRS) and Schottky emission in the high resistive state(HRS), while the mechanism for single layer devices was controlled by ohmic conduction in the LRS and Poole–Frenkel emission in the HRS.

【Abstract】 The impacts of HfO_x inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory(TRRAM) device were investigated in this paper. The bipolar resistive switching behavior of a single ZnO film and bilayer HfO_x/ZnO films as active layers for TRRAM devices was demonstrated. It was revealed that the bilayer TRRAM device with a 10-nm HfO_x inserted layer had a more stable resistive switching behavior than other devices including the single layer device, as well as being forming free, and the transmittance was more than 80% in the visible region. For the HfO_x/ZnO devices, the current conduction behavior was dominated by the space-charge-limited current mechanism in the low resistive state(LRS) and Schottky emission in the high resistive state(HRS), while the mechanism for single layer devices was controlled by ohmic conduction in the LRS and Poole–Frenkel emission in the HRS.

【基金】 Project supported by the National Key Research and Development Program of China(Grant No.2017yfb0405600);the National Natural Science Foundation of China(Grant Nos.61404091,61274113,61505144,51502203,and 51502204);the Natural Science Foundation of Tianjin City(Grant Nos.17JCYBJC16100 and 17JCZDJC31700)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2018年08期
  • 【分类号】TB383.2;TP333
  • 【被引频次】7
  • 【下载频次】52
节点文献中: