【摘要】 介绍了一种65nm双阱CMOS工艺设计的六管SRAM单元的抗辐射性能。通过三维有限元数值模拟的方法,分析了SRAM单元的单粒子瞬态效应在NMOS管中的电荷收集过程和瞬态脉冲电流的组成部分,并提出一种高拟合度的临界电荷计算方案。双阱器件共享电荷诱发的寄生双极放大效应对相邻PMOS管的稳定性有着显著的影响,高线性能量传输提高了器件单粒子翻转的敏感性。电学特性表明,全三维器件数值仿真的方法能够有效评估因内建电势突变产生的瞬态脉冲电流。该方法满足器件仿真对精确度的要求。更多还原

【Abstract】 The radiation hardening performances of a 6-T SRAM cell based on 65 nm dual-well CMOS process were presented.Adopting 3-D numerical simulation with finite element method,the charge collected processes and the constituent parts of transient current pulses which were induced by single event transients on the PMOS transistors in SRAM cells were analyzed.A high fitting solution to calculate the critical charge collection was provided.The charge sharing in the dual-well devices could induce the parasitic bipolar amplification,which had significantly influenced the reliability of adjacent PMOS transistors.Meanwhile,the high linear energy transfer had increased the device’s sensitivity to single event upset effect.The electrical properties indicated that the calculating method by using full 3-D numerical simulation was effective to evaluate the transient current pulses induced by the built-in electric field abrupt change.It met the demands for device precision simulation.更多还原