【摘要】 电子器件空间辐射效应是影响航天器在轨长期可靠运行的重要因素之一,一直是国际上抗辐射加固技术领域研究的热点和难点.高可靠、高集成度、高性能、低功耗、低成本是未来新一代先进电子系统发展的必然要求,采用更高性能的抗辐射加固纳米器件是必然的趋势.本文在深入调研国内外研究现状的基础上,分析了纳米器件辐射效应面临的新问题.纳米工艺存在着很多不同于大尺寸工艺的特点,沟道长度缩小到十几个纳米,栅氧化层等效厚度小于1 nm.在工艺上引入了纵向逆掺杂阱或横向晕环掺杂技术,以降低栅极诱导漏极漏电效应;在材料上引入了多元半导体材料、应变硅、锗硅、高k栅介质、金属栅极等,以降低器件功耗;在结构上引入了三维Fin FET结构,以增强栅的控制能力.这种趋于物理极限的工艺特点、新材料和新结构的采用产生了许多新的辐射效应现象和机制,模拟试验技术更加复杂,给抗辐射加固技术研究带来了新的挑战.本文综述了纳米器件辐射效应的研究现状和趋势,重点针对28 nm及以下特征工艺纳米器件辐射效应研究及模拟试验的需求,提出了需要研究的科学问题和关键技术,希望能为纳米器件抗辐射加固与空间应用提供参考.更多还原

【Abstract】 Radiation damage in electronic devices is one of the key factors determining the survival probability of on-orbit spacecraft. Thus, it has remained an important topic in the field of radiation-hardening technology. High reliability, high integration, high performance, low power consumption, and low cost are the important requirements for the development of next-generation electronic systems. For space electronic systems, the use of radiation-hardened high-performance nano-devices will continue to be an important trend. Based on thorough reviewing of the research status at home and abroad, this paper analyzes new problems faced by nano-devices due to radiation. Nano-device technology is different from that for macroscopic devices. For example, the channel length in nano-devices is reduced to ten nanometers, and the equivalent thickness of their gate oxide is less than one nanometer. In order to reduce the gate-induced drain leakage effect, either vertical inverse doping or transverse halo ring doping is applied to the process. To reduce power consumption, multiple semiconductor materials, such as strained silicon, Ge Si, high k gate dielectric, metal gate, etc., have been introduced. To enhance control over the gate, the structure incorporates 3 D Fin FETs. This process approaches the physical limit, and the adoption of new materials and structures have created new radiation effects and mechanisms. Thus, the experimental techniques become more complex, which brings new challenges to research on radiation-hardening technology. This paper analyzes the present status of domestic and foreign research into radiation effects in nano-devices. Key scientific issues and technologies will be presented, which are needed to study radiation effects and simulation experiments of nano-devices with a feature size of less than 28 nm. Research on photon and heavy ion radiation mechanisms, as well as experimental techniques in nano-devices, should continue receiving focus. In addition, radiation damage mechanisms in nanometer devices should be studied. Heavy-ion micro-beam simulations for the distribution of nano-devices and circuit sensitive areas should be established in order to analyze weak links. A new nano-device and circuit radiation-resistant design method should be proposed. The current survey provides a reference for anti-radiation reinforcement and applications of nano-devices in space.更多还原