【摘要】 按照一种高质高效、自上而下的纳米硅制备方法,以P型重掺杂晶体硅和N型重掺杂晶体硅为原料,探究不同重掺杂类型对电化学性能的影响。采用脉冲放电和高能球磨组合法制备纳米硅颗粒,获得平均粒径(D50)约为100 nm且尺寸分布均匀的硅颗粒。结果表明:P型重掺杂纳米硅的首次充电比容量为1646.5 m Ah/g、库伦效率为65.92%,经过50圈循环,其可逆比容量保持为1353.7 m Ah/g;N型重掺杂纳米硅的首次充电比容量为1730.7 m Ah/g、库伦效率为66.04%,经50圈循环,其可逆比容量保持为1400.1 m Ah/g。更多还原

【Abstract】 In this paper, according to a high quality and efficiency, top-down nano-silicon preparation method. The effects of doping concentration and doping type on the electrochemical properties were investigated by using P-type heavily doped crystalline silicon and N-type heavily doped crystalline silicon. By using pulsed discharge and high energy ball milling to prepare the nanosized silicon particles,the microparticles were obtained with uniform size and average particle size(D50) at about 100 nm. The first time charge specific capacity of P-type heavily doped nano-silicon is1646.5 m Ah/g,the Coulombic efficiency is 65.92%,and after 50 cycles,the reversible specific capacity is maintained at 1353.7 m Ah/g. The first time charge specific capacity of N-type lightly heavily doped nano-silicon is 1730.7 m Ah/g,the Coulombic efficiency is 66.04%,and after 50 cycles, the reversible specific capacity is maintained at 1400.1 m Ah/g.更多还原