节点文献
功率VDMOS器件抗SEB/SEGR技术研究进展
Progress of Radiation Hardened Technology of SEB and SEGR for Power VDMOS
【摘要】 针对功率VDMOS器件抗单粒子辐射加固技术在空间辐射环境下的要求,从重粒子对VDMOS器件的辐射机理及作用过程出发,归纳出功率VDMOS器件抗单粒子辐射加固的三类技术:屏蔽技术、复合技术和增强技术。综述了国内外功率VDMOS器件这三类抗单粒子辐射加固技术的研究进展,为半导体器件抗单粒子辐射加固技术研究提供了参考。
【Abstract】 The failure mechanism and action process of VDMOS radiated by heavy ions were analyzed for performing some hardened technologies on power VDMOS used in space environment.And three radiation hardened technologies,shielding technology,recombination technology and enhancement technology,for power VDMOS were concluded.The developments of single-event radiation hardened technologies for power VDMOS in domestic and international fields were summarized.It could provide reference for the researches about single-event radiation hardened technologies of semiconductor devices.
【Key words】 Power VDMOS; Single-event burnout; Single-event gate-rupture; Hardened technology;
- 【文献出处】 微电子学 ,Microelectronics , 编辑部邮箱 ,2017年03期
- 【分类号】TN386
- 【被引频次】7
- 【下载频次】292