节点文献

功率VDMOS器件抗SEB/SEGR技术研究进展

Progress of Radiation Hardened Technology of SEB and SEGR for Power VDMOS

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 唐昭焕杨发顺马奎谭开洲傅兴华

【Author】 TANG Zhaohuan;YANG Fashun;MA Kui;TAN Kaizhou;FU Xinghua;College of Big Data and Information Engineering,Guizhou University;Science and Technology on Analog Integrated Circuit Laboratory;

【机构】 贵州大学大数据与信息工程学院模拟集成电路重点实验室

【摘要】 针对功率VDMOS器件抗单粒子辐射加固技术在空间辐射环境下的要求,从重粒子对VDMOS器件的辐射机理及作用过程出发,归纳出功率VDMOS器件抗单粒子辐射加固的三类技术:屏蔽技术、复合技术和增强技术。综述了国内外功率VDMOS器件这三类抗单粒子辐射加固技术的研究进展,为半导体器件抗单粒子辐射加固技术研究提供了参考。

【Abstract】 The failure mechanism and action process of VDMOS radiated by heavy ions were analyzed for performing some hardened technologies on power VDMOS used in space environment.And three radiation hardened technologies,shielding technology,recombination technology and enhancement technology,for power VDMOS were concluded.The developments of single-event radiation hardened technologies for power VDMOS in domestic and international fields were summarized.It could provide reference for the researches about single-event radiation hardened technologies of semiconductor devices.

【基金】 国家自然科学基金资助项目(61464002);贵州省重大科技专项资助项目(黔科合重大专项字[2015]6006)
  • 【文献出处】 微电子学 ,Microelectronics , 编辑部邮箱 ,2017年03期
  • 【分类号】TN386
  • 【被引频次】7
  • 【下载频次】292
节点文献中: