【摘要】 在0.18μm标准CMOS工艺模型下,利用亚阈值及深线性区MOS管的特性,设计了一种新颖的偏置电流产生电路,并采用此电路设计出一种具有高电源抑制比、低温度系数的全MOS型基准电压源。该电压源采用全MOS结构,不使用电阻,功耗超低。电源电压在0.9~3V变化时,该电压源均可正常工作,输出电压约为558mV。1.2V电源电压下,在-55℃~100℃温度范围内,该电压源的温度系数为2.3×10-5/℃,低频电源抑制比为-81dB,总功耗约为127nW。更多还原

【Abstract】 A novel current generator was designed in a 0.18μm standard CMOS process relying on the properties of sub-threshold MOSFET and deep-linear-area MOSFET.By adopting this current generator,a low power all MOS voltage reference with high PSRR and low temperature coefficient was designed.This BGR used a structure of all MOS,and did not use resistors,so it had the superiority of ultra-low power consumption.This circuit could steadily work under 0.9~3 V power supply,and the output voltage was about 558 mV.At 1.2 V power supply,the temperature coefficient was 2.3×10-5/℃ at the temperature range from-55 ℃to 100 ℃,the PSRR at low frequency was-81 dB,and the total power consumption was about 127 nW.更多还原