【摘要】 基于低压技术,利用亚阈值区MOS管代替寄生BJT管,设计了一种工作在低电源电压下的基准电压源,并对基准电压进行了温度补偿。采用TSMC 0.18μm CMOS工艺对电路进行了设计和仿真。仿真结果显示:电路正常工作的最低电源电压为0.6V,当电源在0.6².0V范围内变化,基准输出电压仅变化了1.75mV;在0.6V电源电压下,-20℃¹25℃温度范围内,温度系数为2.8×10^-5/℃,电源抑制比为52.47dB@10kHz,整个电路的功耗仅为12μW。更多还原

【Abstract】 Replacing the parasitic BJT with the MOSFET operating in sub-threshold region,a voltage reference source with low supply voltage was designed on the basis of low voltage technology.A temperature compensation circuit was also presented to achieve curvature correction.The complete circuit was designed in the TSMC 0.18μm CMOS technology.Simulation results showed that the proposed circuit was capable of operating at a supply voltage down to 0.6V.The reference voltage changed only 1.75 mV when the supply voltage varied from 0.6Vto 2.0V.Under a 0.6Vsupply,the temperature coefficient was 2.8 ×10^-5/℃ over a wide temperature range of-20 ℃¹25 ℃,and the PSRR was 52.47 dB at 10 kHz.The whole circuit consumed 12μW only.更多还原