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Optical rectification and Pockels effect as a method to detect the properties of Si surfaces

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【作者】 王琦； 张丽； 王鑫； 全海燕； 陈占国； 赵纪红； 刘秀环； 侯丽新； 高延军； 贾刚； 陈少武；

【Author】 Qi Wang;Li Zhang;Xin Wang;Haiyan Quan;Zhanguo Chen;Jihong Zhao;Xiuhuan Liu;Lixin Hou;Yanjun Gao;Gang Jia;Shaowu Chen;State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University;College of Communication Engineering,Jilin University;College of Information Technology,Jilin Agricultural University;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences;

【机构】 State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University； College of Communication Engineering,Jilin University； College of Information Technology,Jilin Agricultural University； State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences；

【摘要】 The depth profile of electric-field-induced(EFI) optical rectification(OR) and EFI Pockels effect(PE) in a Si(110) crystal are investigated. The results show that EFI OR and PE signals are very sensitive to the electric field strength in the surface layers of the Si crystal. Theoretical formulas that include the electric field parameters and the widths of the space-charge region are presented and agreed very well with the experimental results. The experiments and simulations indicate that EFI OR and PE are potential methods for researching the surface/interface properties along the depth direction in centrosymmetric crystals such as Si.

【Abstract】 The depth profile of electric-field-induced(EFI) optical rectification(OR) and EFI Pockels effect(PE) in a Si(110) crystal are investigated. The results show that EFI OR and PE signals are very sensitive to the electric field strength in the surface layers of the Si crystal. Theoretical formulas that include the electric field parameters and the widths of the space-charge region are presented and agreed very well with the experimental results. The experiments and simulations indicate that EFI OR and PE are potential methods for researching the surface/interface properties along the depth direction in centrosymmetric crystals such as Si.

【关键词】 agreed； insulating； maxima； overlap； formulas； normalized； charges； accordance； attributed； distinguish；
【基金】 supported by the National Natural Science Foundation of China(Nos.61474055and 60976043);the National 863 Program of China(No.2009AA03Z419)
  • 【文献出处】 Chinese Optics Letters ,中国光学快报(英文版) , 编辑部邮箱 ,2017年06期
  • 【分类号】O437
  • 【被引频次】1
  • 【下载频次】32
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