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盐酸胍对钌在含双氧水的二氧化硅水溶胶中化学机械抛光的影响

Effect of guanidine hydrochloride on chemical mechanical polishing of ruthenium in aqueous silica sol containing hydrogen peroxide

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【作者】 杜义琛周建伟王辰伟何彦刚张文倩季军

【Author】 DU Yi-chen;ZHOU Jian-wei;WANG Chen-wei;HE Yan-gang;ZHANG Wen-qian;JI Jun;Tianjin Key Laboratory of Electronic Materials and Devices,School of Electronics and Information Engineering,Hebei University of Technology;

【机构】 河北工业大学电子信息工程学院天津市电子材料与器件重点实验室

【摘要】 根据Zeta电势测量、极化曲线测量和原子力显微镜观察的结果,探讨了盐酸胍(GH)在Ru化学机械抛光(CMP)过程中的作用。结果表明:在pH=9的5%SiO2+0.15% H2O2抛光液中,GH的添加可以大幅度提高钌的去除速率。当GH浓度为80 mmol/L时,钌的去除速率最佳。在相同浓度下,GH对Ru去除速率的提高效果优于KCl,皆因GH除了可以提升SiO2颗粒对Ru表面的机械作用之外,还能加速Ru腐蚀。

【Abstract】 The effect of guanidine hydrochloride(GH) on chemical mechanical polishing(CMP) of Ru was studied based on the results of Zeta potential measurement, polarization curve measurement and atomic force microscopic observation. The results showed that the removal rate of Ru in 5% SiO2 + 0.15% H2O2 polishing slurry at pH 9 is greatly improved by the addition of GH and optimal when the concentration of GH is 80 mmol/L. With the same concentration, the improvement of Ru removal rate by GH is better than that by KCl, due to the fact that GH not only enhances the mechanical action of SiO2 particles on Ru surface, but also accelerates the corrosion of Ru.

【基金】 河北省研究生创新资助项目(220056);国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308);河北省青年自然科学基金资助项目(F2015202267)
  • 【文献出处】 电镀与涂饰 ,Electroplating & Finishing , 编辑部邮箱 ,2017年17期
  • 【分类号】TB306
  • 【被引频次】10
  • 【下载频次】109
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