【摘要】 利用TFC光学膜系设计软件,设计出空间用GaInP/(In)GaAs/Ge三结太阳电池的分布式布拉格反射器(DBR)。由15对Al0.2Ga0.8As/Al0.9Ga0.1As组成的布拉格反射器在中心波长850 nm处反射率高达96%,可以使800~900 nm波段内红外光有效反射后被二次吸收,提高了Ga As子电池的抗辐照能力。通过对两种电池结构A、B地面模拟辐照试验获得1 Me V电子辐照下Ga In P/Ga As/Ge太阳电池电学参数随辐照注量退化的基本规律。在此基础上应用PC1D模拟程序分析太阳电池内部的载流子输运机理,建立1 Me V电子辐照下两种电池结构中多数载流子浓度和少数载流子扩散长度随辐照电子注量变化的基本规律。研究结果表明,多数载流子浓度和少数载流子扩散长度均随入射电子注量的增大而减小,同时原电池结构A中多数载流子去除率和少数载流子扩散长度损伤系数明显高于新电池结构B,由此表明包含布拉格反射器的新电池结构具有更强的抗辐照能力。更多还原

【Abstract】 The distributed Bragg reflector( DBR) for space Ga In P/( In) Ga As/Ge triple-junction solar cell is designed based on the TFCalc optical film design software. The reflectivity of 15 pairs of Al0. 2 Ga0. 8 As/Al0. 9 Ga0. 1 As DBR is as high as 96% in the center wavelength of 850 nm. The light in the spectral range of 800—900 nm is reflected then absorbed twice,which enhances the anti-radiation ability of the middle subcell. The basic laws of spectral response,open-circuit voltage and short circuit current of Ga In P/Ga As/Ge solar cells are obtained by ground simulation irradiation test of 1 Me V electron to the two structures. The carrier transport mechanism in cells is analyzed using the PC1 D simulation program,and the variations of the majority carrier concentration and the minority carrier diffusion length with the irradiation particle fluence are obtained of 1 Me V electron irradiation. The results showed that majority carrier concentration and minority carrier diffusion length decrease with increasing the incident electron fluence. The majority carrier removal rate and the damage coefficient of minority carrier diffusion length of the original structure are higher than the new structure,which indicates that the new solar cell structure containing the Bragg reflector has a stronger resistance to radiation.更多还原