Numerical simulation of chemical vapor deposition reaction in polysilicon reduction furnace

【摘要】 Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H₂ mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H₂ mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl₃ conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H₂ mole fraction is 0.8-0.85. With the growth of silicon rod height, Si HCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl₃ conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.更多还原

【Abstract】 Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H₂ mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H₂ mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl₃ conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H₂ mole fraction is 0.8-0.85. With the growth of silicon rod height, Si HCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl₃ conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.更多还原