P-Type Nitrogen-Doped ZnO Films Prepared by In-Situ Thermal Oxidation of Zn₃N₂ Films

【摘要】 P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn₃N₂ films.The prepared films are characterized by x-ray diffraction,non-Rutherford backscattering（non-RBS） spectroscopy,xray photoelectron spectroscopy,and photoluminescence spectrum.The results show that the Zn₃N₂ films start to transform to ZnO at 400°C and the total nitrogen content decreases with the increasing annealing temperature.The p-type films are achieved at 500℃ with a low resistivity of 6.33Ω·cm and a high hole concentration of+8.82 × 10¹⁷ cm^-3,as well as a low level of carbon contamination,indicating that the substitutional nitrogen（N_O） is an effective acceptor in the ZnO:N film.The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy（V_O） defects in the ZnO:N films.The p-type doping mechanism is briefly discussed.更多还原

【Abstract】 P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn₃N₂ films.The prepared films are characterized by x-ray diffraction,non-Rutherford backscattering（non-RBS） spectroscopy,xray photoelectron spectroscopy,and photoluminescence spectrum.The results show that the Zn₃N₂ films start to transform to ZnO at 400°C and the total nitrogen content decreases with the increasing annealing temperature.The p-type films are achieved at 500℃ with a low resistivity of 6.33Ω·cm and a high hole concentration of+8.82 × 10¹⁷ cm^-3,as well as a low level of carbon contamination,indicating that the substitutional nitrogen（N_O） is an effective acceptor in the ZnO:N film.The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy（V_O） defects in the ZnO:N films.The p-type doping mechanism is briefly discussed.更多还原