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Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer

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【作者】 魏秋林； 郭作兴； 赵磊； 赵亮； 袁德增； 缪国庆； 夏茂盛；

【Author】 WEI Qiu-lin;GUO Zuo-xing;ZHAO Lei;ZHAO Liang;YUAN De-zeng;MIAO Guo-qing;XIA Mao-sheng;Key Laboratory of Automobile Materials of Ministry of Education of China, College of Materials Science and Engineering, Jilin University;State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences;

【机构】 Key Laboratory of Automobile Materials of Ministry of Education of China, College of Materials Science and Engineering, Jilin University； State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences；

【摘要】 Microstructure and misfit dislocation behavior in InxGa1-xAs/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition（LP-MOCVD） were analyzed by high resolution transmission electron microscopy（HRTEM）, scanning electron microscopy（SEM）, atomic force microscopy（AFM）, Raman spectroscopy and Hall effect measurements. To optimize the structure of In0.82Ga0.18As/InP heterostructure, the InxGa1-xAs buffer layer was grown. The residual strain of the In0.82Ga0.18As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium（In） content In0.82Ga0.18As epitaxial layer has significant influence on the carrier concentration.

【Abstract】 Microstructure and misfit dislocation behavior in InxGa1-xAs/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition（LP-MOCVD） were analyzed by high resolution transmission electron microscopy（HRTEM）, scanning electron microscopy（SEM）, atomic force microscopy（AFM）, Raman spectroscopy and Hall effect measurements. To optimize the structure of In0.82Ga0.18As/InP heterostructure, the InxGa1-xAs buffer layer was grown. The residual strain of the In0.82Ga0.18As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium（In） content In0.82Ga0.18As epitaxial layer has significant influence on the carrier concentration.

【关键词】 indium； epitaxial； dislocation； verified； optimize； MOCVD； HRTEM； mismatch； scatter； arrangement；
【基金】 supported by the National Key Basic Research Program of China(No.2012CB619200);the National Natural Science Foundation of China(No.61474053);the State Key Laboratory for Mechanical Behavior of Materials of Xi’an Jiaotong University(No.20161806);the Natural Science Basic Research Open Foundation of the Key Lab of Automobile Materials,Ministry of Education,Jilin University(No.1018320144001)
  • 【文献出处】 Optoelectronics Letters ,光电子快报(英文版) , 编辑部邮箱 ,2016年06期
  • 【分类号】TN304
  • 【被引频次】1
  • 【下载频次】16
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