【摘要】 利用气相沉积的方法于铜基片表面可控生长形成氧化铜纳米阵列,通过控制反应温度及反应时间,得出不同生长密度、不同长度及不同直径的氧化铜纳米阵列,研究了该种方法所依据的实验条件对生长形成氧化铜纳米阵列的生长密度、平均长度以及平均直径的制约关系.结果表明:温度越高,则氧化铜纳米阵列生长越密且平均直径越小;反应时间越长,则氧化铜纳米阵列平均长度越大.在此基础上分析了该纳米阵列的生长机制,并最终确立实现不同规格铜基氧化铜纳米阵列可控合成的依据.作为对比,该氧化铜纳米阵列进行硫化处理后所形成的特殊云杉式分级结构相比于硫化铜片直接在铜的表面所生长形成的硫化亚铜阵列更有利于与电解液的接触,为其在电化学上的应用创造了可能.更多还原

【Abstract】 The CuO nanowire arrays have been controlled fabricated on the copper plote substrates by chemical vapor deposition( CVD) method. The different growth density length and diameter of CuO nanowire arrays have been achieved by controlling the reaction temperature and reaction time. The restrictive relation of growth density,average length and average diameter with the experimental conditions has been studied. The results show that the higher the temperature,the denser the growth and the smaller the diameter,and the longer the reaction time,the larger the average length of CuO nanowire arrays. On this basis,the growth mechanism of CuO nanowire arrays has been analyzed. Eventually,the basis of controlled synthesis CuO on the different specification copper substrates has been established. Compared with the one-step synthesis of CuO on the surface of copper by hydrothermal method,the sulfuretted CuO nanowire arrays which formed special spruce type hierarchical structure are more beneficial to contacting with the electrolyte. These results created the possibility for CuO application in supercapacitor.更多还原