【摘要】 通过对IGBT模块栅极电压米勒平台的时延与结温Tj的关系进行研究,首先从理论角度分析了米勒平台时延温度特性;其次设计了稳定可靠的米勒时延测量系统实现栅极米勒平台时间延迟的精确测量;最后,在一定条件(恒定电压、恒定电流)下对米勒平台的时延与结温的关系进行了实验验证。理论与实验均证实,米勒平台的时间延迟随结温的变化而变化,且二者呈现非常好的线性比例关系,结温Tj每升高1℃,栅极电压米勒平台时间延长0.74ns左右。更多还原

【Abstract】 The relationship between time delay of gate voltage Miller plateau on insulated gate bipolar transistor(IGBT) module and junction temperature has been researched in this paper. Firstly, the temperature characteristic of Miller plateau time delay has been analyzed. Secondly, a measurement system of gate voltage Miller plateau has been set up, which could measure the delay time of Miller plateau accurately and reliably. Finally, experiments verify the temperature characteristic of Miller plateau time delay. Both the simulation and the experimental results show that the time delay of Miller plateau varies with the junction temperature, which has a good linear relationship. In this paper, the time delay of Miller plateau increases 0.74 ns as the junction temperature increases 1℃.更多还原