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Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors

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【作者】 叶伟； 任巍； 史鹏； 蒋庄德；

【Author】 Ye Wei;Ren Wei;Shi Peng;Jiang Zhuangde;Electronic Materials Research Laboratory,Key Laboratory of the Ministry of Education & International Center for Dielectric Research,Xi’an Jiaotong University;State Key Laboratory for Manufacturing Systems Engineering,Xi’an Jiaotong University;

【机构】 Electronic Materials Research Laboratory,Key Laboratory of the Ministry of Education & International Center for Dielectric Research,Xi’an Jiaotong University； State Key Laboratory for Manufacturing Systems Engineering,Xi’an Jiaotong University；

【摘要】 The bottom-gate structure ZnO based thin film transistors（ZnO-TFTs） using Bi1.5Zn1.0Nb1.5O7（BZN）thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering.We investigated the effect of annealing temperature at 300,400,and 500 ℃ on the performance of BZN thin films and ZnO-TFTs.XRD measurement confirmed that BZN thin films were amorphous in nature.BZN thin films annealed at 400 ℃ obtain the high capacitance density of 249 nF/cm2,high dielectric constant of 71,and low leakage current density of 10-7 A/cm2 on/off current ratio and field effect mobility of ZnO-TFTs annealed at 400 ℃are approximately one order of magnitude and two times,respectively higher than that of ZnO-TFTs annealed at300 ℃.When the annealing temperature is 400 ℃,the electrical performance of ZnO-TFTs is enhanced remarkably.Devices obtain a low sub-threshold swing of 470 mV/dec and surface states density of 3.21 × 1012cm-2.

【Abstract】 The bottom-gate structure ZnO based thin film transistors（ZnO-TFTs） using Bi1.5Zn1.0Nb1.5O7（BZN）thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering.We investigated the effect of annealing temperature at 300,400,and 500 ℃ on the performance of BZN thin films and ZnO-TFTs.XRD measurement confirmed that BZN thin films were amorphous in nature.BZN thin films annealed at 400 ℃ obtain the high capacitance density of 249 nF/cm2,high dielectric constant of 71,and low leakage current density of 10-7 A/cm2 on/off current ratio and field effect mobility of ZnO-TFTs annealed at 400 ℃are approximately one order of magnitude and two times,respectively higher than that of ZnO-TFTs annealed at300 ℃.When the annealing temperature is 400 ℃,the electrical performance of ZnO-TFTs is enhanced remarkably.Devices obtain a low sub-threshold swing of 470 mV/dec and surface states density of 3.21 × 1012cm-2.

【关键词】 pyrochlore BZN thin films； ZnO-TFTs； RF magnetron sputtering； annealing temperature；
【Key words】 pyrochlore BZN thin films； ZnO-TFTs； RF magnetron sputtering； annealing temperature；
【基金】 Project supported by the National Natural Science Foundation of China(Nos.51332003,51202184);the International Science&Technology Cooperation Program of China(Nos.2010DFB13640,2011DFA51880);the "111 Project" of China(No.B14040)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2016年07期
  • 【分类号】TN321.5
  • 【被引频次】2
  • 【下载频次】22
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