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Evaluation of light extraction efficiency for the light-emitting diodes based on the transfer matrix formalism and ray-tracing method

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【作者】 安平博王莉路红喜于治国刘磊席鑫赵丽霞王军喜李晋闽

【Author】 An Pingbo;Wang Li;Lu Hongxi;Yu Zhiguo;Liu Lei;Xi Xin;Zhao Lixia;Wang Junxi;Li Jinmin;Semiconductor Lighting Research & Development Center, Institute of Semiconductors, Chinese Academy of Sciences;

【机构】 Semiconductor Lighting Research & Development Center, Institute of Semiconductors, Chinese Academy of Sciences

【摘要】 The internal quantum efficiency(IQE) of the light-emitting diodes can be calculated by the ratio of the external quantum efficiency(EQE) and the light extraction efficiency(LEE).The EQE can be measured experimentally,but the LEE is difficult to calculate due to the complicated LED structures.In this work,a model was established to calculate the LEE by combining the transfer matrix formalism and an in-plane ray tracing method.With the calculated LEE,the IQE was determined and made a good agreement with that obtained by the ABC model and temperature-dependent photoluminescence method.The proposed method makes the determination of the IQE more practical and conventional.

【Abstract】 The internal quantum efficiency(IQE) of the light-emitting diodes can be calculated by the ratio of the external quantum efficiency(EQE) and the light extraction efficiency(LEE).The EQE can be measured experimentally,but the LEE is difficult to calculate due to the complicated LED structures.In this work,a model was established to calculate the LEE by combining the transfer matrix formalism and an in-plane ray tracing method.With the calculated LEE,the IQE was determined and made a good agreement with that obtained by the ABC model and temperature-dependent photoluminescence method.The proposed method makes the determination of the IQE more practical and conventional.

【基金】 supported by the National Natural Science Foundation of China(Nos.11574306,61334009);the China International Science and Technology Cooperation Program(No.2014DFG62280);the National High Technology Program of China(No.2015AA03A101)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2016年06期
  • 【分类号】TN312.8
  • 【下载频次】28
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