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Radiation-induced 1/f noise degradation of bipolar linear voltage regulator

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【作者】 赵启凤庄奕琪包军林胡为

【Author】 Zhao Qifeng;Zhuang Yiqi;Bao Junlin;Hu Wei;School of Microelectronics, Xidian University;School of Mechano-Electronic Engineering, Xidian University;

【机构】 School of Microelectronics Xidian UniversitySchool of Mechano-Electronic Engineering Xidian University

【摘要】 Radiation-induced 1/f noise degradation in the LM117 bipolar linear voltage regulator is studied. Based on the radiation-induced degradation mechanism of the output voltage, it is suggested that the band-gap reference subcircuit is the critical component which leads to the 1/f noise degradation of the LM117. The radiation makes the base surface current of the bipolar junction transistors of the band-gap reference subcircuit increase, which leads to an increase in the output 1/f noise of the LM117. Compared to the output voltage, the 1/f noise parameter is more sensitive, it may be used to evaluate the radiation resistance capability of LM117.

【Abstract】 Radiation-induced 1/f noise degradation in the LM117 bipolar linear voltage regulator is studied. Based on the radiation-induced degradation mechanism of the output voltage, it is suggested that the band-gap reference subcircuit is the critical component which leads to the 1/f noise degradation of the LM117. The radiation makes the base surface current of the bipolar junction transistors of the band-gap reference subcircuit increase, which leads to an increase in the output 1/f noise of the LM117. Compared to the output voltage, the 1/f noise parameter is more sensitive, it may be used to evaluate the radiation resistance capability of LM117.

【基金】 Project supported by the National Natural Science Foundation of China(Nos.61076101,61204092)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2016年03期
  • 【分类号】TM44
  • 【被引频次】1
  • 【下载频次】34
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