Bandgap Engineering in Wurtzite GaAs Nanowires by Hydrostatic Pressure

【摘要】 Band structure of wurtzite（WZ） GaAs nanowires（NWs） is investigated by using photoluminescence measurements under hydrostatic pressure at 6K.We demonstrate that WZ GaAs NWs have a direct bandgap transition with an emission energy of 1.53 eV,corresponding to the optical transition between conduction band Γ_7C and valence band Γ_9V in WZ GaAs.The direct-to-pseudodirect bandgap transition can be observed by applying a pressure approximately above 2.5 GPa.更多还原

【Abstract】 Band structure of wurtzite（WZ） GaAs nanowires（NWs） is investigated by using photoluminescence measurements under hydrostatic pressure at 6K.We demonstrate that WZ GaAs NWs have a direct bandgap transition with an emission energy of 1.53 eV,corresponding to the optical transition between conduction band Γ_7C and valence band Γ_9V in WZ GaAs.The direct-to-pseudodirect bandgap transition can be observed by applying a pressure approximately above 2.5 GPa.更多还原