Charge deposition model for investigating SE-microdose effect in trench power MOSFETs

【摘要】 It was demonstrated that heavy ions can induce large current-voltage（Ⅰ-Ⅴ） characteristics shift in commercial trench power MOSFETs,named single event microdose effect（SE-microdose effect）.A model is presented to describe this effect.This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field.Holes deposited at the SiO₂/Si interface by a Xe ion are calculated by using this model.The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET’s Ⅰ—Ⅴ curve shift after a Xe ion has hit it.The simulation results are consistent with the related experiment’s data.In the end,several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model.更多还原

【Abstract】 It was demonstrated that heavy ions can induce large current-voltage（Ⅰ-Ⅴ） characteristics shift in commercial trench power MOSFETs,named single event microdose effect（SE-microdose effect）.A model is presented to describe this effect.This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field.Holes deposited at the SiO₂/Si interface by a Xe ion are calculated by using this model.The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET’s Ⅰ—Ⅴ curve shift after a Xe ion has hit it.The simulation results are consistent with the related experiment’s data.In the end,several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model.更多还原