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A 5 Gb/s low area CDR for embedded clock serial links

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【作者】 李优; 吕俊盛; 周玉梅; 赵建中; 陈玉虎; 张锋;

【Author】 Li You;Lü Junsheng;Zhou Yumei;Zhao Jianzhong;Chen Yuhu;Zhang Feng;Institute of Microelectronics, Chinese Academy of Sciences;

【机构】 Institute of Microelectronics, Chinese Academy of Sciences;

【摘要】 A multi-standard compatible clock and data recovery circuit(CDR) with a programmable equalizer and wide tracking range is presented.Considering the jitter performance,tracking range and chip area,the CDR employs a first-order digital loop filter,two 6-bit DACs and high linearity phase interpolators to achieve high phase resolution and low area.Meanwhile the tracking range is greater than ±2200 ppm,making this proposed CDR suitable for the embedded clock serial links.A test chip was fabricated in the 55 nm CMOS process.The measurements show that the test chip can achieve BER < 10-12and meet the jitter tolerance specification.The test chip occupies 0.19 mm2 with a 0.0486 mm2 CDR core,which only consumes 30 mW from a 1.2 V supply at 5 Gb/s.

【Abstract】 A multi-standard compatible clock and data recovery circuit(CDR) with a programmable equalizer and wide tracking range is presented.Considering the jitter performance,tracking range and chip area,the CDR employs a first-order digital loop filter,two 6-bit DACs and high linearity phase interpolators to achieve high phase resolution and low area.Meanwhile the tracking range is greater than ±2200 ppm,making this proposed CDR suitable for the embedded clock serial links.A test chip was fabricated in the 55 nm CMOS process.The measurements show that the test chip can achieve BER < 10-12and meet the jitter tolerance specification.The test chip occupies 0.19 mm2 with a 0.0486 mm2 CDR core,which only consumes 30 mW from a 1.2 V supply at 5 Gb/s.

【基金】 Project supported by the National High Technology Research and Development Program of China(No.2011AA010403);the National Natural Science Foundation of China(No.61474134);the National Science and Technology Major Project(No.2014ZX02302002)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2015年02期
  • 【分类号】TN919.2
  • 【被引频次】1
  • 【下载频次】46
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